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A Product Line of
Diodes Incorporated
DMC3028LSD
Electrical Characteristics – Q2 P-Channel
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-0.5
±100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
?
18.6
-0.80
16.2
10
-3.0
0.025
0.041
?
-1.2
?
?
V
?
S
V
ns
nC
I D = -250 μ A, V DS = V GS
V GS = -10V, I D = -7.1A
V GS = -4.5V, I D = -5.5A
V DS = -15V, I D = -7.1A
I S = -1.7A, V GS = 0V
I S = -2.2A, di/dt= 100A/ μ s
DYNAMIC CHARACTERISTICS ( Note 9 )
Input Capacitance
C iss
?
1678
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
C oss
C rss
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
303
178
16.4
31.6
4.3
6.2
3.5
4.9
44
28
?
?
?
?
?
?
?
?
?
?
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -15V, V GS = 0V
f= 1MHz
V DS = -15V, V GS = -4.5V
I D = -7.1A
V DS = -15V, V GS = -10V
I D = -7.1A
V DD = -15V, V GS = -10V
I D = -1A, R G ? 6.0 Ω
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
DMC3028LSD
Document Revision: 4
7 of 11
www.diodes.com
July 2009
? Diodes Incorporated
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